Non-volatile memory device and method of programming the same

ABSTRACT

A non-volatile memory device and a method of programming a non-volatile memory device including a plurality of memory cells that are stacked in a vertical direction over a substrate and connected to n word lines, wherein n is an integer greater than or equal to 3. The method includes programming memory cells of second to n−1-th word lines, from among first to n-th word lines that are sequentially disposed in the vertical direction over the substrate, to a multi-level state, wherein a multi-level program operation is sequentially performed from the second to n−1-th word lines in an order in which the word lines are disposed; and programming memory cells of the first word line to a single level state after the programming memory cells of the second to n−1-th word lines to a multi-level state.

CROSS-REFERENCE TO RELATED APPLICATION

This is a Continuation of U.S. application Ser. No. 15/067,620, filedMar. 11, 2016, which claims priority under 35 U.S.C. §119 to KoreanPatent Application No. 10-2015-0035152, filed on Mar. 13, 2015, in theKorean Intellectual Property Office, the entire contents of which arehereby incorporated by reference.

BACKGROUND

The inventive concept described herein relates to a memory device, andmore particularly, to a non-volatile memory device and a method ofprogramming a non-volatile memory device.

Memory devices may be used to store data, and may be classified asvolatile memory devices and non-volatile memory devices. A flash memorydevice, which is an example of a non-volatile memory device, may be usedin a portable phone, a digital camera, a portable digital assistant(PDA), a portable computer device, a fixed computer device, and otherdevices.

SUMMARY

Embodiments of inventive concept provide a non-volatile memory deviceand a method of programming the same which may improve reliability.

Embodiments of the inventive concept provide a method of programming anon-volatile memory device including a plurality of memory cells thatare stacked in a vertical direction over a substrate and that areconnected to n word lines, wherein n is an integer greater than or equalto 3. The method includes programming memory cells of second to n−1-thword lines, from among first to n-th word lines that are sequentiallydisposed in the vertical direction over the substrate, to a multi-levelstate, wherein a multi-level program operation is sequentially performedfrom the second to n−1-th word lines in an order in which the word linesare disposed. The method further includes programming memory cells ofthe first word line to a single level state after the programming ofmemory cells of the second to n−1-th word lines to a multi-level state.

The plurality of memory cells may include a first region including thememory cells of the second to n−1-th word lines and a second regionincluding the memory cells of the first word line. The first region maybe a multi-level cell region configured to store data having at least 2bits per memory cell, and the second region may be a single-level cellregion configured to store 1-bit data per memory cell.

The programming of the memory cells of the second to n−1-th word linesto a multi-level may include sequentially programming the memory cellsof the second to n−1-th word lines in an order in which the second ton−1-th word lines are disposed.

The method may further include programming the memory cells of the n-thword line to a single level state after the programming of the memorycells of the second to n−1-th word lines to a multi-level state.

A second pass voltage applied to the first word line may be equal to orlower than a first pass voltage applied to at least one of the second ton−1-th word lines.

From among the memory cells of the second to n−1-th word lines, thememory cells of the second and n−1-th word lines may store 2-bit data,and the memory cells of the third to n−2-th word lines may store 3-bitdata.

The non-volatile memory device may include a plurality of planes thatare selected by different string selection lines and that share thefirst to n-th word lines therebetween. After memory cells of differentplanes connected to one word line are sequentially programmed in unitsof planes, memory cells connected to another word line may beprogrammed.

Embodiments of the inventive concept further provide a method ofprogramming a vertical NAND (VNAND) flash memory system including a NANDflash memory device that includes a plurality of memory cells which arestacked in a vertical direction over a substrate and connected to wordlines, and a memory controller configured to control a program order ofthe VNAND flash memory device. The method includes sequentiallyprogramming memory cells of a first region including an N-th word line,from memory cells of the N-th word line to memory cells of a word linedisposed farthest from the N-th word line, wherein N is an integer equalto or greater than 2. The method further includes programming memorycells of an N−1-th word line after the programming of the memory cellsof the first region. A maximum value of threshold voltages of the memorycells of the N−1-th word line is equal to or lower than a maximum valueof threshold voltages of the memory cells of the N-th word line.

During the programming of memory cells of a K-th word line (K is aninteger that is greater than N), a first pass voltage may be applied tothe N-th word line, and a second pass voltage having a lower voltagelevel than the first pass voltage is applied to the N−1-th word line.

Embodiments of the inventive concept further provide a method ofprogramming a non-volatile memory device including a plurality of memorycells that are connected to n word lines and that are stacked in avertical direction over a substrate between a ground selectiontransistor and a string selection transistor. The method includesprogramming memory cells of a first word line from the n word lines thatare adjacent the ground selection transistor and memory cells of an n-thword line from among the n word lines that are adjacent the stringselection transistor, after programming memory cells of second to n−1-thword lines from among the n word lines. A maximum value of thresholdvoltages of the memory cells of the first word line is lower than orequal to a maximum value of threshold voltages of the memory cells ofthe second word line.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a schematic block diagram illustrating a memory systemaccording to an embodiment of the inventive concept.

FIG. 2 is a detailed block diagram illustrating a memory device includedin the memory system of FIG. 1, according to an embodiment of theinventive concept.

FIG. 3 is a diagram illustrating a memory cell array included in thememory device of FIG. 2.

FIG. 4 is a circuit diagram illustrating a memory block included in thememory cell array of FIG. 3, according to an embodiment of the inventiveconcept.

FIG. 5 is a block diagram illustrating a memory cell array of FIG. 1.

FIG. 6 is a circuit diagram illustrating a memory block of FIG. 5,according to an embodiment of the inventive concept.

FIG. 7 is a perspective view illustrating the memory block correspondingto the circuit diagram of FIG. 6.

FIGS. 8A, 8B and 8C are graphs showing distributions of memory cellsrelative to a threshold voltage after the programming of a memory deviceis finished.

FIG. 9 is a flowchart illustrating a program method according to anembodiment of the inventive concept.

FIG. 10 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 9, according to an embodiment ofthe inventive concept.

FIGS. 11A and 11B are graphs showing distributions of threshold voltagesof memory cells of an N-th word line and an N−1-th word line.

FIG. 12 is a table showing a maximum value of threshold voltages ofmemory cells, a maximum value of program voltages applied to word lines,and a pass voltage in the program method of FIG. 9.

FIG. 13 is a graph of channel voltages of memory cells during a programoperation according to an embodiment of the inventive concept.

FIG. 14 is a flowchart illustrating a program method according to anembodiment of the inventive concept.

FIG. 15 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 14, according to an embodimentof the inventive concept.

FIG. 16 is a table showing a maximum value of threshold voltages ofmemory cells, a maximum value of program voltages applied to word lines,and a pass voltage in the program method of FIG. 14.

FIG. 17 is a diagram illustrating a program order of memory cellsaccording the program methods shown in FIGS. 9 and 14, according to anembodiment of the inventive concept.

FIG. 18 is a flowchart illustrating a program method according to anembodiment of the inventive concept.

FIG. 19 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 18, according to an embodimentof the inventive concept.

FIG. 20 is a flowchart illustrating a program method according to anembodiment of the inventive concept.

FIG. 21 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 20, according to an embodimentof the inventive concept.

FIGS. 22A and 22B are tables showing a maximum value of thresholdvoltages of memory cells, a maximum value of program voltages applied toword lines, and a pass voltage in the program method of FIG. 20.

FIG. 23 is a diagram illustrating a program method according to anembodiment of the inventive concept.

FIG. 24 is a circuit diagram illustrating another example of a memoryblock of FIG. 5.

FIG. 25 is a diagram illustrating a program order of memory cells of thememory block of FIG. 24, according to a program method according to anembodiment of the inventive concept.

FIG. 26 is a table showing threshold voltages of the memory cells ofFIG. 25 and voltages applied to the memory cells and the dummy memorycells.

FIG. 27 is a schematic block diagram illustrating a memory systemaccording to another embodiment of the inventive concept.

FIG. 28 is a block diagram illustrating an example embodying the memorycontroller of FIG. 27.

FIG. 29 is a block diagram illustrating an example of applying thememory system according to any one of the above-described embodiments ofthe inventive concept to a memory card system.

FIG. 30 is a block diagram illustrating a computing system including amemory system according to any one of the above-described embodiments ofthe inventive concept.

FIG. 31 is a block diagram illustrating an example of applying thememory system according to any one of the above-described embodiments ofthe inventive concept to a solid-state drive (SSD) system.

DETAILED DESCRIPTION OF THE EMBODIMENTS

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

The inventive concept will now be described more fully with reference tothe accompanying drawings, in which embodiments of the inventiveconcepts are shown. However, the inventive concept is not limitedthereto and it will be understood that various changes in form anddetails may be made therein without departing from the spirit and scopeof the inventive concept. That is, descriptions on particular structuresor functions may be presented merely for explaining exemplaryembodiments of the inventive concepts Throughout the drawings, likereference numerals denote like elements.

Also, terms such as “include” or “comprise” may be construed to denote acertain characteristic, number, step, operation, constituent element, ora combination thereof, but may not be construed to exclude the existenceof or a possibility of addition of one or more other characteristics,numbers, steps, operations, constituent elements, or combinationsthereof.

As used herein, the term “or” includes any and all combinations of oneor more of the associated listed items. For example, an expression “A orB” may include A, B, or both A and B.

Terms such as “first” and “second” are used herein merely to describe avariety of constituent elements, but the constituent elements are notlimited by the terms. For example, such terms are not intended to limitthe orders and/or degrees of importance of constituent elements. Suchterms are used only for the purpose of distinguishing one constituentelement from another constituent element. For example, a first userdevice and a second user device are both user devices but indicatedifferent user devices. For example, without departing from the rightscope of the inventive concept, a first constituent element may bereferred to as a second constituent element, and vice versa.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present.

Terms used in the specification are for explaining specific exemplaryembodiments, not for limiting the present inventive concept. Thus, anexpression used in a singular form in the specification also includesthe expression in its plural form unless clearly specified otherwise incontext.

Unless defined otherwise, all terms used herein including technical orscientific terms have the same meanings as those generally understood bythose of ordinary skill in the art to which the inventive concept maypertain. The terms as those defined in generally used dictionaries areconstrued to have meanings matching that in the context of relatedtechnology and, unless clearly defined otherwise, are not construed tobe ideally or excessively formal.

FIG. 1 is a schematic block diagram illustrating a memory system 10according to an embodiment of the inventive concept.

Referring to FIG. 1, the memory system 10 includes a memory device 100and a memory controller 200. The memory device 100 includes a memorycell array 110 and a program management unit 121.

The memory cell array 110 may include a plurality of memory cellsdisposed in regions in which a plurality of word lines (refer to WL inFIG. 2) intersect a plurality of bit lines (refer to BL in FIG. 2). Inan embodiment of the inventive concept, the plurality of memory cellsmay be flash memory cells, and the memory cell array 110 may be a NANDflash memory cell array or a NOR flash memory cell array.

Hereinafter, embodiments of the inventive concept will be describedassuming that the memory cells are NAND flash memory cells. For example,the plurality of memory cells may be NAND flash memory cells arranged ina 2-dimensional horizontal structure (refer to FIGS. 3 and 4). Inanother example, the plurality of memory cells may be vertical NAND(VNAND) flash memory cells arranged in a three-dimensional (3D) verticalstructure (refer to FIGS. 5 to 7 and 24). However, the inventive conceptis not limited thereto. In other exemplary embodiments, the plurality ofmemory cells may be resistive memory cells, such as resistive RAM (RRAM)memory cells, phase-change RAM (PRAM) memory cells, or magnetic RAM(MRAM) memory cells.

In an embodiment of the inventive concept, the memory cell array 110 maybe divided into a plurality of memory groups, each of which may includea plurality of memory cells. For example, the plurality of memory groupsmay be divided into memory blocks. In another example, the plurality ofmemory groups may be divided into word lines. In another example, theplurality of memory groups may be divided into pages. In anotherexample, the plurality of memory groups may be divided into dies.However, the inventive concept is not limited thereto, and the pluralityof memory groups may be divided into arbitrary program units.

In an embodiment of the inventive concept, each of the memory cellsincluded in the memory cell array 110 may be a single-level cell (SLC)configured to store 1-bit data. In another exemplary embodiment, each ofthe memory cells included in the memory cell array 110 may be amulti-level cell (MLC) configured to store 2-bit data. In anotherexemplary embodiment, each of the memory cells included in the memorycell array 110 may be a triple-level cell (TLC) configured to store3-bit data. However, the inventive concept is not limited thereto. Inanother exemplary embodiment, each of the memory cells included in thememory cell array 110 may store four bits or more of data.

The program management unit 121 determines an order in which the memorycells of the memory cell array 110 are programmed, and controls thenumber of bits of data that are to be stored in the memory cells or alevel of a voltage applied to the memory cells when the memory cells areprogrammed in the determined order. The program management unit 121 maydetermine a program order such that memory cells of an N−1-th word lineare programmed after memory cells of a first region including an N-thword line are programmed in a memory block included in the memory cellarray 110. The N−1-th word line may be a word line disposed more outwardthan the N-th word line in a memory cell string, and may refer to a wordline disposed adjacent to a ground selection line or a string selectionline. Memory cells of the first region including the N-th word line maybe memory cells disposed farther from the ground selection transistor orthe string selection transistor than the memory cells of the N−1-th wordline. The program management unit 121 determines the program order suchthat memory cells disposed close to the ground selection transistor orthe string selection transistor are programmed after the memory cellsdisposed far from the ground selection transistor or the stringselection transistor are programmed.

In this case, the program management unit 121 determines the number ofbits of data to be stored in the memory cells of the N−1-th word line ora level of a program voltage such that a maximum value of a thresholdvoltage of the memory cells of the N−1-th word line is equal to or lessthan a maximum value of a threshold voltage of the memory cells of theN-th word line. In another exemplary embodiment, the number of bits ofdata programmed in the memory cells of the N−1-th word line may bedetermined by the memory controller 200.

The memory controller 200 controls the memory device 100 to read datastored in the memory device 100 or write data in the memory device 100in response to read/write requests from a host HOST. Specifically, thememory controller 200 provides an address ADDR, a command CMD, and acontrol signal CTRL to the memory device 100, and controls program (orwrite), read, and erase operations of the memory device 100. Also, dataDATA for a program operation and read data DATA may be transmitted andreceived between the memory controller 200 and the memory device 100.

Although not shown, the memory controller 200 may include RAM, aprocessing unit, a host interface, and a memory interface. The RAM maybe used as a working memory of the processing unit, and the processingunit may control an operation of the memory controller 200. The hostinterface may use a protocol configured to exchange data between thehost and the memory controller 200. For example, the memory controller200 may communicate with the outside (e.g., the host HOST) via at leastone of various interface protocols, such as universal serial bus (USB),multimedia card (MMC), peripheral component interface-express (PCI-E),advanced technology attachment (ATA), serial-ATA (SATA), parallel-ATA(PATA), small computer system interface (SCSI), enhanced small deviceinterface (ESDI), and intelligent drive electronics (IDE), among others.

FIG. 2 is a detailed block diagram illustrating the memory device 100included in the memory system 10 of FIG. 1, according to an embodimentof the inventive concept.

Referring to FIG. 2, the memory device 100 may includes a memory cellarray 110, a control logic 120, a voltage generator 130, a row decoder140, a page buffer 150, and a data input/output circuit 160.Hereinafter, constituent elements included in the memory device 100 willbe described in detail.

The memory cell array 110 is connected to a plurality of word lines WLand a plurality of bit lines BL. Although not shown, the memory cellarray 110 may be connected to at least one string selection line SSL andat least one ground selection line GSL. The memory cell array 110 mayinclude a plurality of memory cells (refer to MC of FIG. 4, MC1 to MC8of FIG. 6, and MC1 to MC5 of FIG. 24) disposed in regions in which theplurality of word lines WL intersect the plurality of bit lines BL. Eachof the plurality of memory cells may store 1-bit data or multi-bit data.

When an erase voltage is applied to the memory cell array 110, theplurality of memory cells MC may be put into an erase state. When aprogram voltage is applied to the memory cell array 110, the pluralityof memory cells MC may be put into a program state. In this case, eachof the memory cells MC may have an erase state E and at least oneprogram state, which are divided according to a threshold voltage Vth.

In an embodiment of the inventive concept, when the memory cell MC is asingle-level cell, the memory cell MC may have an erase state and aprogram state. In another exemplary embodiment, the memory cell MC mayhave one of an erase state and a plurality of program states. Forexample, when the memory cell MC is a multi-level cell, the memory cellMC may have an erase state and three program states. In another example,when the memory cell MC is a triple-level cell, the memory cell MC mayhave an erase state and seven program states.

The control logic 120 outputs various output signals for writing data inthe memory cell array 110 or reading data from the memory cell array 110based on the command CMD, the address ADDR, and the control signal CTRLreceived from the memory controller 200. Thus, the control logic 120 maygenerally control various operations of the memory device 100.

The various control signals output by the control logic 120 are providedto the voltage generator 130, the row decoder 140, and the page buffer150. Specifically, the control logic 120 provides a voltage controlsignal CTRL_vol to the voltage generator 130, provides a row addressX-ADDR to the row decoder 140, and provides a column address Y-ADDR tothe page buffer 150. However, the inventive concept is not limitedthereto, and the control logic 120 may further provide other controlsignals to the voltage generator 130, the row decoder 140, and the pagebuffer 150.

The voltage generator 130 generates various types of voltages forperforming program, read, and erase operations on the memory cell array110, based on the voltage control signal CTRL_vol. Specifically, thevoltage generator 130 generates a word line driving voltage VWL fordriving the plurality of word lines WL. In this case, the word linedriving voltage VWL may be a program voltage (or write voltage), a readvoltage, an erase voltage, an inhibition voltage, or a programverification voltage. Although not shown, the voltage generator 130 mayfurther generate a string selection line driving voltage VSSL fordriving a plurality of string selection lines SSL and a ground selectionline driving voltage VGSL for driving a plurality of ground selectionlines GSL.

The row decoder 140 is connected to the memory cell array 110 throughthe plurality of word lines WL, and enables some of the plurality ofword lines WL in response to the row address X-ADDR received from thecontrol logic 120. Specifically, during a read operation, the rowdecoder 140 may apply a read voltage to a selected word line, and mayapply a non-selection voltage to unselected word lines. Also, during aprogram operation, the row decoder 140 may apply a program voltage to aselected word line, and apply a non-selection voltage (or referred to asa pass voltage) to unselected word lines. Hereinafter, the non-selectionvoltage will be referred to as a pass voltage.

The page buffer 150 is connected to the memory cell array 110 throughthe plurality of bit lines BL. Specifically, during a read operation,the page buffer 150 operates as a sense amplifier and outputs data DATAstored in the memory cell array 110. Meanwhile, during a programoperation, the page buffer 150 operates as a write driver and inputsdata DATA to be stored to the memory cell array 110.

The data input/output (I/O) circuit 160 may transmits externally inputdata DATA to the page buffer 150 or transmits data DATA output by thepage buffer 150 through a plurality I/O pins or a data bus to theoutside, for example to the memory controller (refer to 200 in FIG. 1).

In an embodiment of the inventive concept, the control logic 120 mayincludes the program management unit 121. As described above withreference to FIG. 1, the program management unit 121 determines an orderin which the memory cells of the memory cell array 110 are programmed,and controls the number of bits of data to be stored in the memory cellsor a level of a voltage to be applied to the memory cells when thememory cells are programmed in the determined order.

The program management unit 121 determines a program order such thatmemory cells of an N−1-th word line are programmed after memory cells ofa first region including an N-th word line are programmed in a memoryblock (refer to 110 a in FIG. 3 or 110 b in FIG. 5) included in thememory cell array 110. Thereafter, the program management unit 121generates the row address X-ADDR such that the memory cell array 110 isprogrammed in the determined order. In this case, an N−1-th word linemay be a word line that is adjacent to a ground selection line or astring selection line and disposed relatively outward from among aplurality of word lines included in the memory block. The N-th word lineincluded in the first region may be a word line that is disposed moreinward than the N−1-th word line, or in other words relatively furtheraway from a ground selection line or a string selection line than theN−1-th word line. Thus, after memory cells disposed relatively inwardfrom among memory cells included in the memory block are firstprogrammed, memory cells disposed outward, for example, memory cellsadjacent to ground selection transistors or string selectiontransistors, may be subsequently or finally (lastly) programmed.

The program management unit 121 determines the number of bits (e.g., asingle bit or multiple bits) of data that is programmed in memory cellsof the N−1-th word line or determines a level of a program voltage suchthat a maximum value of threshold voltages of the memory cells of theN−1-th word line is equal to or lower than a maximum value of thresholdvoltages of the memory cells of the N-th word line.

The program management unit 121 generates a voltage control signalCTRL_vol based on the determined number of bits or the determined levelof the program voltage. The voltage generator 130 generates a voltagethat is applied to the memory cells of the N−1-th word line and avoltage that is applied to the memory cells of the N-th word line basedon the voltage control signal CTRL_vol. The voltage applied to thememory cells of the N−1-th word line and the voltage applied to thememory cells of the N-th word line may include, for example, a programvoltage and a pass voltage and may further include a program detectionvoltage and a read voltage. In one exemplary embodiment, a read controlunit (not shown) additionally included in the control logic 120 maydetermine voltage levels of read voltages respectively applied to thememory cells of the N−1-th word line and the N-th word line based on thenumber of bits of data or the level of the program voltage, which isdetermined by the program management unit 121, and provide a signalindicating the determined voltage levels as the voltage control signalCTRL_vol to the voltage generator 130.

In another exemplary embodiment of the inventive concept, the number ofbits of data that is programmed in the memory cells of the N−1-th wordline may be determined by the memory controller 200 and provided as acommand (CMD) signal, and the program management unit 121 may generatethe voltage control signal CTRL_vol based on the command CMD signal.

A program method of the program management unit 121 will be described indetail below with reference to FIGS. 3 to 26.

FIG. 3 is a diagram illustrating the memory cell array 110 included inthe memory device 100 of FIG. 2, according to an embodiment of theinventive concept.

Referring to FIG. 3, the memory cell array 110 may be a flash memorycell array. In this case, the memory cell array 110 may include a (a isan integer equal to or greater than 2) memory blocks BLK1 to BLKa, eachof which may include b (b is an integer equal to or greater than 2)pages PAGE1 to PAGEb. Each of the pages PAGE1 to PAGEb may include c (cis an integer equal to or greater than 2) sectors SEC1 to SECc. AlthoughFIG. 3 illustrates only the memory block BLK1 including the pages PAGE0to PAGEb and sectors SEC1 to SECc for brevity, each of the other memoryblocks BLK2 to BLKa may have the same structure as the memory blockBLK1.

FIG. 4 is a circuit diagram illustrating an example of a first memoryblock BLK_a of memory blocks included in the memory cell array 110 ofFIG. 3.

Referring to FIG. 4, the first memory block BLK_a may be a horizontalNAND flash memory, and each of the memory blocks BLK1 to BLKa shown inFIG. 3 may be embodied as shown in FIG. 4. For example, the first memoryblock BLK_a may include d (d is an integer equal to or greater than 2)strings STR, each of which may include 8 memory cells connected inseries. Each of the strings STR may include a string selectiontransistor SST and a ground selection transistor GST, which may berespectively connected to two ends of the memory cells MC connected inseries. Here, the number of strings STR, the number of word lines WL,and the number of bit lines BL may be variously changed according toexemplary embodiments.

In the NAND flash memory device having the structure shown in FIG. 4, anerase operation may be performed in units of memory blocks, and aprogram operation may be performed in units of pages PAGE correspondingrespectively to the word lines WL1 to WL8. For example, when the memorycell MC is a single-level cell, one page PAGE may correspond to each ofthe word lines WL1 to WL8. In another example, when the memory cell MCis a multi-level cell or a triple-level cell, a plurality of pages PAGEmay correspond to each of the word lines WL1 to WL8.

FIG. 5 is a block diagram illustrating the memory cell array 110 ofFIG. 1. Referring to FIG. 5, the memory cell array 110 may include aplurality of memory blocks BLK, for example, memory blocks BLK1 to BLKn,each of which may have a 3-dimensional (3D) structure (or a verticalstructure). In one exemplary embodiment, each of the memory blocks BLKmay include 3D structures that extend in a plurality of directions(e.g., x, y, and z). For example, each of the memory blocks BLK mayinclude a plurality of NAND cell strings that extend in a z direction.

Each of the NAND cell strings may be connected to a bit line BL, astring selection line SSL, a ground selection line GSL, word lines WL,and a common source line CSL. That is, each of the memory blocks BLK maybe connected to a plurality of bit lines BL, a plurality of stringselection lines SSL, a plurality of ground selection lines GSL, aplurality of word lines WL, and the common source line CSL. The memoryblocks BLK1 to BLKb will now be described in further detail withreference to FIG. 6.

FIG. 6 is a circuit diagram illustrating an example BLK_b of the memoryblock of FIG. 5.

Referring to FIG. 6, a first memory block BLK_b may be a vertical NAND(VNAND) flash memory, and each of the memory blocks BLK1 to BLKn shownin FIG. 5 may be embodied as shown in FIG. 6. The first memory blockBLK_b may include a plurality of NAND strings (e.g., NS11 to NS33), aplurality of word lines (e.g., WL1 to WL8), a plurality of bit lines(e.g., BL1 to BL3), a ground selection line GSL, a plurality of stringselection lines (e.g., SSL1 to SSL3), and a common source line CSL.Here, the number of NAND strings, the number of word lines, the numberof bit lines, the number of ground selection lines, and the number ofstring selection lines may be variously changed according to exemplaryembodiments.

The NAND strings NS11 to NS33 may be connected between the bit lines BL1to BL3 and the common source line CSL. Each of the NAND strings, forexample, the NAND string NS11, may include a string selection transistorSST, a plurality of memory cells MC1 to MC8, and a ground selectiontransistor GST, which are connected in series. The string selectiontransistor SST or the ground selection transistor GST may have the samecell structure as or a similar cell structure as the plurality of memorycells MC1 to MC8. The string selection transistor SST or the groundselection transistor GST may be programmed to have a predeterminedthreshold voltage and used as a transistor. However, the inventiveconcept is not limited thereto. Alternatively, the string selectiontransistor SST or the ground selection transistor GST may have adifferent cell structure from the plurality of memory cells MC1 to MC8according to a manufacturing method.

The NAND strings NS11, NS21, and NS31 may be provided between the firstbit line BL1 and the common source line CSL, and the NAND strings NS12,NS22, and NS32 may be provided between the second bit line BL2 and thecommon source line CSL. Also, the NAND strings NS13, NS23, and NS33 maybe provided between the third bit line BL3 and the common source lineCSL. Each of the NAND strings, for example, the NAND string NS11, mayinclude a string selection transistor SST, a plurality of memory cellsMC1 to MC8, and a ground selection transistor GST, which may beconnected in series. Hereinafter, the NAND string will be referred to asa string for brevity.

Strings connected in common to one bit line may constitute one column.For example, strings NS11, NS21, and NS31 connected in common to thefirst bit line BL1 may correspond to a first column, strings NS12, NS22,and NS32 connected in common to the second bit line BL2 may correspondto a second column. Also, strings NS13, NS23, and NS33 connected incommon to the third bit line BL3 may correspond to a third column.

Strings connected to one string selection line may constitute one row.For example, the strings NS11, NS12, and NS13 connected to the firststring selection line SSL1 may correspond to a first row, and thestrings NS21, NS22, and NS23 connected to the second string selectionline SSL2 may correspond to a second row. The strings NS31, NS32, andNS33 connected to the third string selection line SSL3 may correspond toa third row.

The string selection transistors SST may be connected to the stringselection lines SSL1 to SSL3. The plurality of memory cells MC1 to MC8may be respectively connected to the word lines WL1 to WL8 correspondingthereto. The ground selection transistors GST may be connected to theground selection line GSL. The string selection transistors SST may beconnected to the bit line BL corresponding thereto, and the groundselection transistors GST may be connected to the common source lineCSL.

Word lines (e.g., WL1) disposed at the same level may be connected incommon, and the string selection lines SSL1 to SSL3 disposed at the samelevel may be separated from one another. A plurality of NAND stringsconnected to one of the plurality of string selection lines SSL1 toSSL3, for example, NAND strings NS11, NS12, and NS13 or a plurality ofmemory cells connected to the first string selection line SSL1 may bereferred to as a plane PLANE. When the first string selection line SSL1is selected and a program voltage is applied to the first word line WL1,memory cells that are included in the NAND strings NS11, NS12, and NS13of a first row and connected to the first word line WL1 may beprogrammed Thus, a program operation may be performed on each planePLANE in a unit of a page corresponding to a word line.

FIG. 7 is a perspective view illustrating a memory block BLK_bcorresponding to the circuit diagram of FIG. 6.

Referring to FIG. 7, the memory block BLK_b is formed in a verticaldirection to a substrate SUB. A common source line CSL is disposed inthe substrate SUB, and a plurality of gate electrodes GE and a pluralityof insulating layers IL are alternately stacked on the substrate SUB.Also, a charge storage layer CS may be is formed between the gateelectrodes GE and the insulating layers IL.

When the gate electrodes GE and the insulating layers IL that arealternately stacked are vertically patterned, pillars P are formed. Eachof the pillars P may have a V shape. Each of the pillars P are formedthrough the gate electrodes GE and the insulating layers IL andconnected to the substrate SUB. An outer portion O of each of thepillars P is formed of a semiconductor material and functions as achannel region. An inner portion I of each of the pillars P is formed ofan insulating material, such as silicon oxide.

The gate electrodes GE of the memory block BLK_b are respectivelyconnected to a ground selection line GSL, a plurality of word lines WL1to WL8, and a string selection line SSL. Also, the pillars P of thememory block BLK_b are connected to a plurality of bit lines BL1 to BL3.Although FIG. 7 illustrates a case in which the memory block BLK_bincludes two selection lines GSL and SSL, eight word lines WL1 to WL8,and three bit lines BL1 to BL3, the memory block BLK_b may actuallyinclude more or fewer selection lines, more or fewer word lines, andmore or fewer bit lines.

FIGS. 8A, 8B and 8C are graphs showing distributions of memory cellsrelative to a threshold voltage after the programming of a memory deviceis finished. FIG. 8A shows a case in which the memory cells aresingle-level cells, and FIG. 8B shows a case in which the memory cellsare multi-level cells. Also, FIG. 8C shows a case in which the memorycells are triple-level cells.

In FIGS. 8A to 8C, an abscissa denotes a threshold voltage Vth, and anordinate denotes the number of memory cells MC.

Referring to FIG. 8A, when the memory cell MC is a single-level cell SLCprogrammed with one bit, the memory cell MC may have one of an erasestate E and a first program state P1. A first read voltage Vr11 may havea voltage level between a distribution of memory cells MC having theerase state E and a distribution of memory cells MC having the firstprogram state P1. It may be determined whether the memory cell MC hasthe erase state E or the first program state P1 based on the first readvoltage Vr11.

For example, when the first read voltage Vr11 is applied to a controlgate of the memory cell MC, the memory cell MC having the erase state Emay be turned on, while the memory cell MC having the first programstate P1 may be turned off. When the memory cell MC is turned on,current may flow through the memory cell MC. When the memory cell MC isturned off, current may not flow through the memory cell MC.Accordingly, data stored in the memory cell MC may be determineddepending on whether the memory cell MC is turned on or off.

In an embodiment of the inventive concept, when the memory cell MC isturned on with application of the first read voltage Vr11, it may bedetermined that data ‘1’ is stored. When the memory cell MC is turnedoff, it may be determined that data ‘0’ is stored. However, theinventive concept is not limited thereto. In another exemplaryembodiment, when the memory cell MC is turned on with application of afirst read voltage Vr11, it may be determined that data ‘0’ is stored.When the memory cell MC is turned off, it may be determined that data‘1’ is stored. Thus, assignment of a logic level of data may be changedaccording to exemplary embodiments.

Referring to FIG. 8B, when the memory cell MC is a multi-level cell MLCthat is programmed with 2 bits, the memory cell MC may have one of anerase state E, a first program state P1, a second program state P2, anda third program state P3. In the multi-level cell MLC, an intervalbetween distributions of threshold voltages Vth may be smaller than inthe single-level cell SLC. Each of first to third read voltages Vr21,Vr22, and Vr23 may correspond to an initialized default level. It may bedetermined which of the erase state E and the first to third programstates P1 to P3 the memory cell MC has based on first to third readvoltage Vr21, Vr22, and Vr23.

Referring to FIG. 8C, when the memory cell MC is a triple-level cell TLCthat is programmed with 3 bits, the memory cell MC may have one of anerase state E and first to seventh program states P1 to P7. Each offirst to seventh read voltages Vr31 to Vr37 may correspond to aninitialized default level. It may be determined which of the erase stateE and the first to seventh program states P1 to P7 the memory cell MChas based on first to seventh read voltages Vr31 to Vr37.

As shown in FIGS. 8A to 8C, a maximum threshold voltage Vth_max1 of thesingle-level cell SLC may be lower than a maximum threshold voltageVth_max2 of the multi-level cell MLC. Also, the maximum thresholdvoltage Vth_max2 of the multi-level cell MLC may be lower than a maximumthreshold voltage Vth_max3 of the triple-level cell TLC.

FIG. 9 is a flowchart illustrating a program method according to anembodiment of the inventive concept. The program method shown in FIG. 9is a method of determining a program order in the program managementunit 121 shown in FIGS. 1 and 2.

Referring to FIG. 9, memory cells of a first region including an N-th (Nis an integer equal to or greater than 2) word line may be programmed(S110). A memory block BLK may be divided into at least two regionsbased on the N-th word line. In this case, the N-th word line refers toan N-th word line from the ground selection line (refer to GSL in FIGS.4 and 6) or the string selection line (SSL in FIGS. 4 and 6). The memoryblock BLK may include a first region including the N-th word line and asecond region including an N−1-th word line. For example, when N is 2,the first region may include at least one word line including a secondword line, and the second region may include a first word line. When Nis 3, the first region may include at least one different word lineincluding a third word line, and the second region may include a secondword line and a first word line. In one exemplary embodiment, the numberof word lines included in the first region may be more than the numberof word lines included in the second region.

As described with reference to FIGS. 4 and 6, the memory block BLK maybe programmed in a unit of a page including memory cells connected toone word line and one string selection line. In this case, according tothe present exemplary embodiment, memory cells of the first region maybe programmed first. In one exemplary embodiment, the first region mayinclude N-th to K-th (K is an integer that is greater than N) wordlines, and memory cells of the N-th to K-th word lines may be programmedin an order in which the N-th to K-th word lines are disposed. Forexample, the memory cells of the N-th word line to the memory cells ofthe K-th word line may be sequentially programmed Each of the memorycells of the N-th to K-th word lines may be programmed to a multi-levelstate. In other words, each of the memory cells of the N-th to K-th wordlines may store at least 2 bit data. As such, programming a memory cellto a multi-level state may be referred to as a multi-level programoperation. The multi-level program operation may be sequentially startedor finished from the N-th word line to the K-th word line. In oneexemplary embodiment, when the memory cells of the N-th to K-th wordlines are programmed to a multi-level state, a shadow program method maybe used. According to the shadow program method, word lines may benon-sequentially selected during the programming of a plurality ofpages, and before a multi-level program operation on memory cells of anyone word line is finished, another word line may be selected andprogrammed In other words, a plurality of word lines may be alternatelyselected and programmed during a multi-level program operation. However,a program operation on each of a plurality of logic pages (e.g., alowermost page, a middle page, or an uppermost page) that are programmedin memory cells may be sequentially performed from the N-th word line tothe K-th word line. Accordingly, the multi-level program operation maybe sequentially started or finished from the N-th word line to the K-thword line.

In another exemplary embodiment, word lines may be sequentially selectedduring the programming of a plurality of pages, and after a multi-levelprogram operation on memory cells of any one word line is finished,another word line may be selected and programmed. Accordingly, themulti-level program operation may be sequentially started and finishedfrom the N-th word line to the K-th word line. In another exemplaryembodiment, memory cells of word lines may be programmed in a randomorder irrespective of the order in which the word lines are disposed.

After the memory cells of the first region are programmed, the memorycells of the N−1-th word line may be programmed (S120), as shown in FIG.9. In this case, a maximum value of threshold voltages of the memorycells of the N−1-th word line are equal to or lower than a maximum valueof threshold voltages of the memory cells of the N-th word line.

According to the present embodiment of the inventive concept, after thememory cells of the N-th word line are programmed, the memory cells ofthe N−1-th word line are programmed. In this case, the maximum value ofthreshold voltages of the memory cells of the N−1-th word line are equalto or lower than the maximum value of threshold voltages of the memorycells of the N-th word line.

FIG. 10 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 9, according to an embodiment ofthe inventive concept. FIG. 10 illustrates a program order of memorycells of a memory block (or a plane of a memory block of a VNAND flashmemory). Although FIG. 10 illustrates one string for brevity, a memoryblock or one plane of the memory block may actually include a pluralityof strings selected by one string selection line SSL, and a plurality ofmemory cells may be connected to one word line. Memory cells of aplurality of strings may be simultaneously programmed in units of wordlines, namely, in units of pages.

Referring to FIG. 10, memory cells MC respectively connected to n wordlines WL1 to WLn are disposed between a ground selection transistor GSTand a string selection transistor SST. Word lines from a word lineadjacent to a ground selection line GSL to a word line adjacent to thestring selection line SSL are sequentially referred to as first to n-thword lines WL1 to WLn. The memory cells MC are programmed by applying aprogram voltage to the word lines corresponding thereto. The programvoltage may be applied to one of the first to n-th word lines WL1 toWLn. The program voltage may be sequentially applied to the first ton-th word lines WL1 to WLn.

The memory block may be divided into a first region R1 including an N-thword line and a second region R2 including an N−1-th word line. As shownin FIG. 10, it will be assumed that N is 2, the first region R1 includessecond to n-th word lines WL2 to WLn, and the second region R2 includesthe first word line WL1.

First, memory cells of the first region R1, that is, memory cells of thesecond to n-th word lines WL2 to WLn, may be programmed.

In one exemplary embodiment, the memory cells of the second to n-th wordlines WL2 to WLn may be programmed in an order in which the word linesare disposed. For example, as shown in FIG. 10, after the memory cellsof the second memory line WL2 are programmed, the memory cells of thethird word line WL3 may be programmed. Thus, the memory cells of thesecond word line WL2 to the memory cells of the n-th word line WLn maybe sequentially programmed. Alternatively, the memory cells of the n-thword line WLn to the memory cells of the second word line WL2 may besequentially programmed.

In another exemplary embodiment, the memory cells of the second to n-thword lines WL2 to WLn may be programmed in a random order irrespectiveof the order in which the word lines are disposed.

After the memory cells of the first region R1 are programmed, the memorycells of the first word line WL1 are programmed In this case, a maximumvalue of threshold voltages of the memory cells of the first word lineWL1 are equal to or lower than a maximum value of threshold voltages ofthe memory cells of the second word line WL2. In one exemplaryembodiment, the memory cells of the second word line WL2 and the memorycells of the first word line WL1 may be programmed such that the numberof distributions of the threshold voltages of the memory cells of thesecond word line WL2 is different from the number of distributions ofthe threshold voltages of the memory cells of the first word line WL1.Thus, the maximum value of the threshold voltages of the memory cells ofthe first word line WL1 may be lower than the maximum value of thethreshold voltages of the memory cells of the second word line WL2. Inanother exemplary embodiment, the program operation may be performedsuch that distributions of the threshold voltages of the memory cells ofthe first word line WL1 are in an equal number to and in a differentshape from distributions of the threshold voltages of the memory cellsof the second word line WL2. Thus, a maximum value of the thresholdvoltages of the memory cells of the first word line WL1 may be lowerthan or equal to a maximum value of the threshold voltages of the memorycells of the second word line WL2. The above-described exemplaryembodiments will now be described with reference to FIGS. 11A and 11B.

FIGS. 11A and 11B are graphs showing distributions of threshold voltagesof memory cells of an N-th word line and an N−1-th word line, accordingto an embodiment of the inventive concept. FIG. 11A shows a case inwhich the number of distributions of the threshold voltages of thememory cells of the N-th word line is different from the number ofdistributions of the threshold voltages of the memory cells of theN−1-th word line. FIG. 11B shows a case in which distributions of thethreshold voltages of the memory cells of the N-th word line are in anequal number to and in a different shape from distributions of thethreshold voltages of the memory cells of the N−1-th word line.

Referring to FIG. 11A, the memory cells of the N-th word line WL(N) areprogrammed to a multi-level state, and the memory cells of the N−1-thword line WL(N−1) are programmed to a single level state so that thenumber of distributions of the threshold voltages of the memory cells ofthe N-th word line is different from the number of distributions of thethreshold voltages of the memory cells of the N−1-th word line. In thecase of FIG. 11A, memory cells of a word line WL2 shown in FIG. 10 maybe used as multi-level cells, and memory cells of a first word line WL1may be used as single-level cells. Thus, a maximum value of thresholdvoltages of the memory cells of the N-th-1 word line WL(N−1) is lowerthan a maximum value of threshold voltages of the memory cells of theN-th word line WL(N).

FIG. 11A illustrates a case in which the memory cells of the N-th wordline WL(N) are programmed to a 2-bit multi-level and the memory cells ofthe N−1-th word line WL(N−1) are programmed to a single level, but theinventive concept is not limited thereto. The memory cells of the N-thword line WL(N) and the memory cells of the N−1-th word line WL(N−1) maybe respectively programmed to a 3-bit multi-level (i.e., a triple level)and a single level, or programmed to a triple level and a 2-bitmulti-level.

Referring to FIG. 11B, memory cells of a second word line WL2 (WL(N))and a first word line WL1 (WL(N−1)) may be programmed to a multi-level.However, by differently determining levels of program voltages appliedto the memory cells of the N-th word line and the memory cells of theN−1-th word line and time durations for which the program voltages areapplied, the memory cells of the second word line WL2 and the first wordline WL1 may be programmed such that the distributions of the memorycells of the N-th word line are different from the distributions of thememory cells of the N−1-th word line. That is, the threshold voltagedistributions of the memory cells of the N-th word line have a differentshape (are wider for example) than the threshold voltage distributionsof the memory cells of the N−1-th word line. Thus, a maximum value Vth2of threshold voltages of the memory cells of the N−1-th word lineWL(N−1) may be equal to or lower than a maximum value Vth1 of thresholdvoltages of the memory cells of the N-th word line WL(N).

Alternatively, when the memory cells of the second word line WL2 and thefirst word line WL1 are programmed to have different distributions asshown in FIG. 11B, voltage levels of program verification voltages andread voltages to be applied to the memory cells of the second word lineWL2 and the first word line WL1 may be differently determined in aprogram order or a program voltage level determined by the programmanagement unit (refer to 121 in FIG. 2)

FIG. 11B illustrates a case in which the memory cells of the N-th wordline WL(N) and the memory cells of the N−1 word line WL(N−1) areprogrammed to a triple level, but the inventive concept is not limitedthereto. For example, the memory cells of the N-th word line WL(N) andthe memory cells of the N−1-th word line WL(N−1) may be programmed to a2-bit multi-level or a 4-bit multi-level (i.e., a quadruple level).

Referring back to FIG. 10, according to the program method of thepresent embodiment of the inventive concept, after memory cells of asecond word line are programmed, memory cells of a first word line maybe programmed such that a maximum value of threshold voltages of thememory cells of the first word line is equal to or lower than a maximumvalue of threshold voltages of the memory cells of the second word line.

Although FIG. 10 illustrates a case in which a second region R2 includesone word line, the inventive concept is not limited thereto. The secondregion R2 may further include an N−1-th word line and at least one wordline other than the N−1-th word line.

FIG. 12 is a table showing a maximum value of threshold voltages ofmemory cells, a maximum value of program voltages applied to word lines,and a pass voltage in the program method of FIG. 9.

As described above with reference to FIGS. 9 to 11B, a maximum valueVth2 of threshold voltages of memory cells of an N−1-th word lineWL(N−1) may be lower than or equal to a maximum value Vth1 of thresholdvoltages of memory cells of an N-th word line WL(N).

Thus, during a program operation, a maximum value Vpgm2 of programvoltages applied to the N−1-th word line WL(N−1) may be lower than orequal to a maximum value Vpgm1 of program voltages applied to the N-thword line WL(N).

Alternatively, during a program operation on word lines other than theN-th word line WL(N) and the N−1-th word line WL(N−1), a pass voltageVpass2 applied to the N−1-th word line WL(N−1), namely, a non-selectionvoltage, may be lower than or equal to a pass voltage Vpass1 applied tothe N-th word line WL(N).

FIG. 13 is a graph of channel voltages Vch of memory cells during aprogram operation according to an embodiment of the inventive concept.

Referring to FIG. 13, when memory cells of a selected word line WL2 areprogrammed by applying a program voltage Vpgm to the selected word lineWL2, pass voltages Vpass1 and Vpass2 may be applied to unselected wordlines WL1 and WL3. A voltage level of a second pass voltage Vpass2applied to a first word line WL1 of the unselected word lines may belower than or equal to a voltage level of a first pass voltage Vpass1applied to a third word line WL3. A channel voltage of each of memorycells of the word lines WL1, WL2, and WL3 may be boosted due to acapacitance formed between a gate of the memory cells and a channel, andthis phenomenon is referred to as channel boosting. Meanwhile, a voltageof about 0V may be applied to a common source line CSL to enable programinhibition. A voltage of about 0V may be applied to a ground selectionline GSL to prevent leakage of the channel voltage that is boosted byturning off a ground selection transistor SST.

During a program operation on memory cells, when a sharp variation inchannel voltage between the ground selection transistor GST and memorycells adjacent thereto occurs, a hot carrier injection (HCI) phenomenonmay occur in the memory cells. Thus, threshold voltages of the memorycells may rise to cause degradation of distributions of the thresholdvoltages. Furthermore, program disturbance may be caused by undesirablyprogramming the memory cells.

To prevent occurrence of the sharp variation in the channel voltagebetween the ground selection transistor GST and the memory cellsadjacent thereto, an appropriate pass voltage, for example, the secondpass voltage Vpass2, may be applied to the first word line WL1 connectedto the memory cells adjacent to the ground selection transistor GST.Thus, a channel voltage of memory cells of the first word line WL1 mayhave a level between a channel voltage of the ground selectiontransistor GST and channel voltages of the memory cells of the secondword line WL2, and a channel voltage may gradually increase from theground selection transistor GST to the programmed memory cell. Althoughnot shown, a dummy memory cell may be inserted between the groundselection transistor GST and a memory cell adjacent thereto, and a biasvoltage may be applied to the dummy memory cell so that a channelvoltage of the dummy memory cell has an intermediate level between thechannel voltage of the ground selection transistor GST and channelvoltages of the memory cells of the first word line WL1.

However, when a memory cell of the first word line that is most adjacentto the ground selection transistor GST is programmed, a level of thechannel voltage of the memory cell may depend on whether the memory cellis in an erase state or a program state. If the pass voltage Vpass2 isdetermined based on a case in which the memory cell is in the erasestate, when the memory cell is in the program state, a threshold voltageof the memory cell may be increased so that a memory cell to which thepass voltage Vpass2 is applied may be turned off, and a channel voltageof the memory cell may not be boosted but markedly reduced more thanwhen the memory cells is in the erase state. When a high program voltageVpgm is applied to a memory cell adjacent to the above-described memorycell, for example a memory cell of the second word line WL2, a sharpvariation in channel voltage between the memory cell of the first wordline WL1 and the memory cell of the second word line WL2 may occur tocause an HCI phenomenon. Also, distributions of the memory cells of thesecond word line WL2 may be degraded.

When a level of the pass voltage Vpass2 is increased, even if the memorycell is in the program state, a sharp variation in channel voltage maybe prevented by turning on the memory cell. However, when the memorycell is in the erase state, a channel voltage of the memory cell mayincrease. Thus, a potential difference in channel voltage between theground selection transistor GST and the memory cell may increase, sothat program disturbance may occur in the memory cell that is in theerase state. Thus, when a memory cell adjacent to the ground selectiontransistor GST is programmed, a channel voltage may depend on whetherthe memory cell is in an erase state or a program state. Thus, it may bedifficult to determine a voltage level of an appropriate second passvoltage Vpass2 to be applied during a subsequent program operation onanother adjacent memory cell.

However, according to the program method of the present embodiment ofthe inventive concept, since the memory cell adjacent to the groundselection transistor GST (e.g., the memory cell of the first word lineWL1) is programmed after other memory cells (e.g., the memory cells ofthe second and third word lines WL2 and WL3) are programmed, the secondpass voltage Vpass2 may be determined based on a case in which thememory cell is in an erase state. Also, the program operation may beperformed such that a maximum value of threshold voltages of the memorycell is equal to or lower than a maximum value of a threshold voltage ofanother memory cell adjacent to the memory cell. Thus, a voltage levelof the second pass voltage Vpass2 or the program voltage Vpgm applied tothe memory cell may be as low as possible. Thus, occurrence of a sharpvariation in channel voltage between the ground selection transistor GSTand memory cells adjacent thereto may be prevented. As shown in FIG. 13,as a channel voltage gradually increases from the ground selectiontransistor GST to the programmed memory cell, an HCI phenomenon may beprevented, and reliability of the memory cells may be improved.

FIG. 14 is a flowchart illustrating a program method according to anembodiment of the inventive concept, which illustrates a modifiedexample of the program method shown in FIG. 9. The program methoddescribed with reference to FIG. 9 may be applied to the program methodshown in FIG. 14.

Referring to FIG. 14, memory cells of an N-th word line to memory cellsof an uppermost word line may be sequentially programmed (S210). Forexample, when a memory block includes n word lines, memory cells of theN-th word line to memory cells of the n-th word line may be sequentiallyprogrammed Subsequently, memory cells of an N−1-th word line may beprogrammed such that a maximum value of threshold voltages of the memorycells of the N−1-th word line is equal to or lower than a maximum valueof threshold voltages of the memory cells of the N-th word line (S220).The program operations S210 and S220 may be similar to the programoperations S110 and S120 of FIG. 9, and thus detailed descriptionsthereof are omitted.

After the memory cells of the N−1-th word line are programmed, it may bedetermined whether the N−1-th word line is a lowermost word line (S230).In other words, it may be determined whether the N−1-th word line is afirst word line. In this case, if it is determined in step S230 that thefirst word line is a word line that is most adjacent to a groundselection transistor or a string selection transistor (YES), theprogramming may be ended.

If it is determined in step S230 that the N−1-th word line is not thelowermost word line (NO), N may be reduced by 1 (S240), and the programoperation S220 may be repeated. For example, when N is initially 3,since a (3-1)-th word line (i.e., a second word line) is not thelowermost word line, N may be reduced by 1, and memory cells of theN−1-th word line (i.e., the first word line) may be programmed In thiscase, the program operation may be performed such that a maximum valueof threshold voltages of the memory cells of the first word line isequal to or lower than a threshold voltage of the memory cells of thesecond word line. Operations S220 to S240 may be repeated so that eventhe memory cells of the lowermost word line (i.e., the first word line)may be programmed.

FIG. 15 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 14, according to an embodimentof the inventive concept.

Referring to FIG. 15, a first region R1 includes third to n-th wordlines WL3 to WLn, and a second region R2 includes first and second wordlines WL1 and WL2. According to the program method shown in FIG. 14,first of all, memory cells of the first region R1, that is, memory cellsof the third to n-th word lines WL3 to WLn are programmed.

In one embodiment of the inventive concept, the memory cells of thethird to n-th word lines WL3 to WLn may be programmed in an order inwhich word lines are disposed. In another exemplary embodiment, thememory cells of the third to n-th word lines WL3 to WLn may beprogrammed in a random order irrespective of an order in which wordlines are disposed.

After the memory cells of the first region R1 are programmed, the memorycells of the second word line WL2 are programmed. In this case, amaximum value of threshold voltages of the memory cells of the secondword line WL2 is equal to or lower than a maximum value of thresholdvoltages of the memory cells of the third word line WL3. In oneembodiment of the inventive concept, the memory cells of the second wordline WL2 may be programmed to a different level from the memory cells ofthe third word line WL3. For example, the memory cells of the third wordline WL3 may be programmed to a triple level, while the memory cells ofthe second word line WL2 may be programmed to a multi-level or a singlelevel. Alternatively, the memory cells of the third word line WL3 may beprogrammed to a multi-level, while the memory cells of the second wordline WL2 may be programmed to a single level. In another exemplaryembodiment, the memory cells of the second word line WL2 may beprogrammed to the same level as the memory cells of the third word lineWL3 such that a distribution of threshold voltages of the memory cellsof the second word line WL2 is different (has different shape forexample) from a distribution of threshold voltages of the memory cellsof the third word lines WL3. Thus, a maximum value of threshold voltagesof the memory cells of the second word line WL2 may be equal to or lowerthan a maximum value of threshold voltages of the memory cells of thethird word line WL3.

After the memory cells of the second word line WL2 are programmed, thememory cells of the first word line WL1 are programmed. A maximum valueof threshold voltages of the memory cells of the first word line WL1 isequal to or lower than a maximum value of threshold voltages of thememory cells of the second word line WL2. In one embodiment of theinventive concept, the memory cells of the second word line WL2 may beprogrammed to a different level from the memory cells of the first wordline WL1 so that the maximum value of threshold voltages of the memorycells of the first word line WL1 may be lower than the maximum value ofthreshold voltages of the memory cells of the second word line WL2. Inanother exemplary embodiment, the second word line WL2 and the firstword line WL1 may be programmed to the same level such that adistribution of threshold voltages of the memory cells of the secondword line WL2 is different from a distribution of threshold voltages ofthe memory cells of the first word line WL1. Thus, the maximum value ofthreshold voltages of the memory cells of the first word line WL1 may belower than or equal to the maximum value of threshold voltages of thememory cells of the second word line WL2.

Thus, after the memory cells of the first region R1 are programmed, thememory cells of the second region R2 are programmed In this case, fromamong the word lines of the second region R2, memory cells of a wordline which is most adjacent to the first region R1 to memory cells of alowermost word line, are sequentially programmed In the memory cells ofthe second region R2, a maximum value of threshold voltages of memorycells that are programmed are lower than or equal to a maximum value ofthreshold voltages of memory cells that are previously programmed.

FIG. 16 is a table showing a maximum value of threshold voltages ofmemory cells, a maximum value of program voltages applied to word lines,and a pass voltage in the program method of FIG. 14.

As described with reference to FIGS. 14 and 15, a maximum thresholdvoltage Vth2 of memory cells of an N−1-th word line WL(N−1) is lowerthan or equal to a maximum threshold voltage Vth1 of memory cells of anN-th word line WL(N). Also, a maximum threshold voltage Vth3 of memorycells of an N−2-th word line WL(N−2) is lower than or equal to themaximum threshold voltage Vth2 of the memory cells of the N−1-th wordline WL(N−1).

Thus, during a program operation, a maximum program voltage Vpgm2applied to the N−1-th word line WL(N−1) is lower than or equal to amaximum program voltage Vpgm1 applied to the N-th word line WL(N). Amaximum program voltage Vpgm3 applied to the N−2-th word line WL(N−2) islower than or equal to the maximum program voltage Vpgm2 applied to theN−1-th word line WL(N−1).

Alternatively, during a program operation on memory cells of other wordlines, a pass voltage Vpass2 applied to the N−1-th word line WL(N−1) islower than or equal to a pass voltage Vpass1 applied to the N-th wordline WL(N). A pass voltage Vpass3 applied to the N−2-th word lineWL(N−2) is lower than or equal to the pass voltage Vpass2 applied to theN−1-th word line WL(N−1).

FIG. 17 is a diagram illustrating a program order of memory cells MCaccording the program methods shown in FIGS. 9 and 14, according to anembodiment of the inventive concept.

Referring to FIG. 17, memory cells MC respectively connected to n wordlines WL1 to WLn are disposed between a ground selection transistor GSTand a string selection transistor SST. A word line adjacent to a stringselection line SSL to a word line adjacent to a ground selection lineGSL may be sequentially referred to as first to n-th word lines WL1 toWLn.

After the memory cells of a first region R1 (i.e., memory cells of thirdto n-th word lines WL3 to WLn) are programmed, memory cells of a secondregion R2 (i.e., memory cells of the second word line WL2 and the firstword line WL1) are programmed In this case, the second word line WL2 andthe first word line WL1 are sequentially programmed, and a maximum valueof threshold voltages of memory cells of the second word line WL2 andthe first word line WL1 may be equal to or lower than a maximum value ofthreshold voltages of previously programmed memory cells (i.e., memorycells of the third word line WL3 and the second word line WL2).

In FIGS. 10 and 15, a word line adjacent to the ground selection lineGSL to a word line adjacent the string selection line SSL aresequentially referred to as first to n-th word lines WL1 to WLn, and amemory cell adjacent to the ground selection transistor GST isprogrammed finally or last (that is after programming of memory cells ofother word lines) according to the corresponding described programmethods However, the inventive concept is not limited thereto. In otherembodiments of the inventive concept as shown in FIG. 17, a word lineadjacent to the string selection line SSL may be referred to a lowermostword line, for example the first word line WL1, and a memory celladjacent to the string selection transistor SST may be programmed last(after programming of memory cells of other word lines).

FIG. 18 is a flowchart illustrating a program method according to anembodiment of the inventive concept, which illustrates a modifiedexample of the program method shown in FIG. 9.

Referring to FIG. 18, from among first to n-th word lines disposedbetween a ground selection line and a string selection line, memorycells of second to n−1-th word lines are programmed to a multi-levelstate (S310). The memory cells of the second to n−1-th word lines may besequentially programmed in an order in which the second to n−1-th wordlines are disposed, or randomly programmed.

In one embodiment of the inventive concept, the memory cells of thesecond to n−1-th word lines may be programmed such that the same numberof bits of data is stored in the memory cells of the second to n−1-thword lines. For example, all the memory cells of the second to n−1-thword lines may be programmed to a multi-level corresponding to 2-bitdata or a triple level corresponding to 3-bit data.

In another exemplary embodiment, the memory cells of the second ton−1-th word lines may be programmed such that different numbers of bitsof data are stored in the memory cells of the second to n−1-th wordlines. For example, memory cells of at least some word lines of thesecond to n−1-th word lines may be programmed to a multi-level, whilememory cells of other word lines may be programmed to a triple level.

After the memory cells of the second to n−1-th word lines are programmedto a multi-level state, memory cells of the n-th word line areprogrammed to a single level state (S320), and memory cells of the firstword line are programmed to a single level state (S330). Operations S320and S330 may be performed in reverse order.

According to the present embodiment of the inventive concept, memorycells disposed in an outer portion of a memory string may be programmedto a single level state, and memory cells disposed in an inner portionof the memory string may be programmed to a multi-level state. Aftermulti-level cells are programmed, single-level cells may be programmed.

FIG. 19 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 18, according to an embodimentof the inventive concept.

Referring to FIG. 19, from among a plurality of memory cells MC1 to MCn,a first memory cell MC1 and an n-th memory cell MCn disposed in an outerportion of a string are programmed to a single level state, and a secondmemory cell MC2 to an n−1-th memory cell MCn−1 disposed in an innerportion of the string are programmed to a multi-level state.

The second memory cell MC2 to the n−1-th memory cell MCn−1 may beincluded in a first region R1, which is a multi-level cell regionconfigured to store data having at least two bits per memory cell. Thefirst memory cell MC1 and the n-th memory cell MCn may be respectivelyincluded in second and third regions R2 and R3, each of which may be asingle-level cell region configured to store 1-bit data per memory cell.

As shown in FIG. 19, the second memory cell MC2 and the n−1-th memorycell MCn−1 may be programmed to a multi-level, and a third memory cellMC3 to an n−2-th memory cell MCn−2 may be programmed to a triple level.However, the inventive concept is not limited thereto, and a programoperation may be variously changed. For example, all of the second ton−1-th memory cells MC2 to MCn−1 may be programmed to a multi-level or atriple level.

A multi-level program operation may be performed preferentially to asingle-level program operation. That is, initially, the second to n−1-thmemory cells MC2 to MCn−1 may be programmed to a multi-level. As shownin FIG. 19, the second to n−1-th memory cells MC2 to MCn−1 may besequentially programmed. Alternatively, the second to n−1-th memorycells MC2 to MCn−1 may be programmed in a random order. Subsequently,the n-th memory cell MCn may be programmed to a single-level, and thefirst memory cell MC1 may be finally programmed to a single level.

FIG. 20 is a flowchart illustrating a program method according to anembodiment of the inventive concept, which is a modified example of theprogram method shown in FIG. 9.

Referring to FIG. 20, memory cells of a first region including an N-th(N is an integer equal to or greater than 2) word line to a K-th (K isan integer that is greater than N) word line are programmed (S410). Amemory block BLK may be divided into at least three regions based on theN-th word line and the K-th word line. In this case, the N-th word lineand the K-th word line respectively refer to N-th and K-th word linesfrom the ground selection line (SSL in FIGS. 4 and 6) or the stringselection line (SSL in FIGS. 4 and 6). The memory block BLK may includea first region including the N-th word line to the K-th word line, asecond region including an N−1-th word line, and a third regionincluding a K+1-th word line. For example, when N is 2 and K is 4, thefirst region may include second to fourth word lines, the second regionmay include a first word line, and the third region may include a fifthword line or include the fifth word line and at least one word lineother than the fifth word line.

When N is 3 and K is 4, the first region may include third and fourthword lines, the second region may include first and second word lines,and the third region may include a fifth word line or include the fifthword line and at least one word line other than the fifth word line. Inone exemplary embodiment, the number of word lines included in the firstregion may be greater than the number of word lines included in thesecond region.

In one embodiment of the inventive concept, memory cells of the N-thword line to the K-th word line of the first region may be programmed inan order in which the word lines are disposed. For example, the memorycells of the N-th word line to the memory cells of the K-th word linemay be sequentially programmed in units of pages connected to the wordlines. In another exemplary embodiment, the memory cells of the wordlines may be programmed in a random order irrespective of an order inwhich the word lines are disposed.

After the memory cells of the first region are programmed, memory cellsof the second region including the N−1-th word line are programmed(S420). In this case, the program operation is performed such that amaximum value of threshold voltages of the memory cells of the N−1-thword line is equal to or lower than a maximum value of thresholdvoltages of memory cells of the N-th word line. The memory cells of theN−1-th word line to memory cells of a lowermost word line may besequentially programmed.

After the memory cells of the second region are programmed, memory cellsof the third region including the K+1-th word line are programmed(S430). When memory cells of a plurality of word lines of the thirdregion are programmed, memory cells of the K+1-th word line of theplurality of word lines are sequentially programmed in a disposed order.In one embodiment of the inventive concept, the program operation may beperformed such that a maximum value of threshold voltages of the memorycells of the K+1-th word line is equal to a maximum value of thresholdvoltages of the memory cells of the K-th word line. In another exemplaryembodiment, the program operation may be performed such that the maximumvalue of threshold voltages of the memory cells of the K+1-th word lineis equal to the maximum value of threshold voltages of the memory cellsof the N−1-th word line.

FIG. 21 is a diagram illustrating a program order of memory cellsaccording to the program method of FIG. 20, according to an embodimentof the inventive concept.

Referring to FIG. 21, a memory block may include first to third regionsR1, R2, and R3. As shown in FIG. 21, the first region R1 includes memorycells of second to n−1-th word lines WL2 to WLn−1, the second region R2may include memory cells of a first word line WL1, and the third regionR3 may include memory cells of an n-th word line WLn. However, theinventive concept is not limited thereto, and the number of word linesincluded in each of the second and third regions R2 and R3 may bevariously changed.

According to the program method of FIG. 20, first of all, the memorycells of the first region R1, that is, the memory cells of the second ton−1-th word lines WL2 to WLn−1, are programmed.

In one exemplary embodiment of the inventive concept, the memory cellsof the second word line WL2 to the n−1-th word line WLn−1 may beprogrammed in an order in which the word lines are disposed. As shown inFIG. 21, the memory cells of the second word line WL2 to the memorycells of the n−1-th word line WLn−1 may be sequentially programmed.Alternatively, the memory cells of the n−1-th word line WLn−1 to thememory cells of the second word line WL2 may be sequentially programmed.

In another exemplary embodiment, the memory cells of the second ton−1-th word lines WL2 to WLn−1 may be programmed in a random orderirrespective of an order in which the word lines are disposed.

After the memory cells of the first region R1 are programmed, the memorycells of the first word line WL1 of the second region R2 are programmedIn this case, a maximum value of threshold voltages of the memory cellsof the first word line WL1 is equal to or lower than a maximum value ofthreshold voltages of the memory cells of the second word line WL2. Inone embodiment of the inventive concept, the memory cells of the firstword line WL1 may be programmed to a lower level than the memory cellsof the second word line WL2. In another exemplary embodiment, the memorycells of the first word line WL1 and the memory cells of the second wordline WL2 may be programmed to the same level but have differentdistributions from each other. Thus, a maximum value of thresholdvoltages of the memory cells of the first word line WL1 may be equal toor lower than a maximum value of threshold voltages of the memory cellsof the second word line WL2.

After the memory cells of the second region R2 are programmed, memorycells of an n-th word line WLn of the third region R3 are programmed Inone embodiment of the inventive concept, a maximum value of thresholdvoltages of the memory cells of the n-th word line WLn may be equal to amaximum value of threshold voltages of the threshold voltages of thesecond word line WL2. In another exemplary embodiment, a maximum valueof threshold voltages of the memory cells of the n-th word line WLn maybe equal to a maximum value of threshold voltages of the thresholdvoltages of the first word line WL1.

FIGS. 22A and 22B are tables showing a maximum value of thresholdvoltages of memory cells, a maximum value of program voltages applied toword lines, and a pass voltage in the program method of FIG. 20.

Referring to FIG. 22A, a maximum threshold voltage Vth2 of memory cellsof an N−1-th word line WL(N−1) is lower than or equal to a maximumthreshold voltage Vth1 of memory cells of an N-th word line WL(N). Inaddition, a maximum threshold voltage Vth3 of memory cells of a K+1-thword line WL(K+1) is equal to the maximum threshold voltage Vth1 of thememory cells of the N-th word line WL(N).

Thus, during a program operation, a maximum program voltage Vpgm2applied to the N−1-th word line WL(N−1) is lower than or equal to amaximum program voltage Vpgm1 applied to the N-th word line WL(N). Amaximum program voltage applied to a K+1-th word line WL(K+1) is equalto the maximum program voltage Vpgm1 applied to the N-th word lineWL(N).

Alternatively, during a program operation, a pass voltage Vpass2 appliedto the N−1-th word line WL(N−1) is lower than or equal to a pass voltageVpass1 applied to the N-th word line WL(N). A pass voltage Vpass3applied to a K+1-th word line WL(K+1) is equal to the pass voltageVpass1 applied to the N-th word line WL(N).

Referring to FIG. 22B, a maximum threshold voltage Vth2 of memory cellsof the N−1-th word line WL(N−1) is lower than or equal to a maximumthreshold voltage Vth1 of memory cells of the N-th word line WL(N). Inaddition, a maximum threshold voltage Vth3 of memory cells of the K+1-thword line WL(K+1) is equal to the maximum threshold voltage Vth2 of thememory cells of the N−1-th word line WL(N−1).

Thus, during a program operation, a maximum program voltage Vpgm2applied to the N−1-th word line WL(N−1) is lower than or equal to amaximum program voltage Vpgm1 applied to the N-th word line WL(N). Amaximum program voltage Vpgm3 applied to the K+1-th word line WL(K+1) isequal to the maximum program voltage Vpgm2 applied to the N−1-th wordline WL(N−1).

Alternatively, during a program operation, a pass voltage Vpass2 appliedto the N−1-th word line WL(N−1) is lower than or equal to a pass voltageVpass1 applied to the N-th word line WL(N). A pass voltage Vpass3applied to the K+1-th word line WL(K+1) is equal to the pass voltageVpass2 applied to the N−1-th word line WL(N−1).

FIG. 23 is a diagram illustrating a program method according to anembodiment of the inventive concept.

The program method according to the present embodiment may be a methodof programming the memory block (refer to BLK_b in FIG. 6) of a VNANDflash memory device including a plurality of planes. The program methoddescribed above with reference to FIGS. 3 to 22B may be applied to thepresent embodiment.

In the VNAND flash memory device, a memory block BLK may include aplurality of planes PLa to PLd. Referring to FIG. 6, each of the planesPLa to PLd may include a plurality of NAND strings connected to onestring line of a plurality of string lines (refer to SSL1, SSL2, andSSL3 of FIG. 6). For example, a first row of NAND strings NS11, NS12,and NS13 connected to a first string selection line SSL1 may constituteone plane, and a second row of NAND strings NS21, NS22, and NS23connected to a second string selection line SSL2 may constitute anotherplane.

As described above with reference to FIGS. 3 to 22B, memory cells of afirst region including an N-th word line are programmed, and then memorycells of an N−1-th word line are programmed In this case, after allmemory cells of the plurality of planes PLa to PLd are programmed in oneword line, memory cells of the next word line may be programmed.

Referring to FIG. 23, the memory block BLK may include four planes PLa,PLb, PLc, and PLd, each of which may include 48 word lines. In therespective planes PLa, PLb, PLc, and PLd, second word lines WLa2, WLb2,WLc2, and WLd2 to 48-th word line WLa48, WLb48, WLc48, and WLd48 may beincluded in the first region, and first word lines WLa1, WLb1, WLc1, andWLd1 may be included in a second region. As shown in FIG. 23, memorycells of the second word lines WLa2, WLb2, WLc2, and WLd3 to the 48-thword lines WLa48, WLb48, WLc48, and WLd48 may be sequentially programmedIn this case, memory cells of one word line may be sequentiallyprogrammed in units of planes. For example, as shown in FIG. 23, memorycells of the second word lines WLa2, WLb2, WLc2, and WLd3 of a pluralityof planes PLa, PLb, PLc, and PLd may be sequentially programmed, andmemory cells of third word lines WLa3, WLb3, WLc3, and WLd3 of theplurality of planes PLa, PLb, PLc, and PLd may be then sequentiallyprogrammed FIG. 23 illustrates a case in which the first to fourthplanes PLa to PLd are sequentially programmed in an order in which thefirst to fourth planes PLa to PLd are disposed, but the inventiveconcept is not limited thereto. For example, the fourth to first planesPLd to PLa may be sequentially programmed in an order in which thefourth to first planes PLd to PLa are disposed, or programmed in arandom order.

Thus, in the plurality of planes PLa, PLb, PLc, and PLd, after thesecond word lines WLa2, WLb2, WLc2, and WLd2 to the 48-th word linesWLa48, WLb48, WLc48, and WLd48 are programmed, memory cells of the firstword lines WLa1, WLb1, WLc1, and WLd1 may be sequentially programmed inunits of planes.

The method of programming the memory block BLK of the VNAND flash memorydevice has been described with reference to FIG. 23 as an example of amethod of programming a VNAND flash memory device, but the inventiveconcept is not limited thereto. The program order of the memory cells ofthe word lines of the plurality of the planes PLa, PLb, PLc, and PLd maybe variously modified without departing from a program method in whichthe memory cells of the N−1-th word line are programmed after the memorycells of the first region including the N-th word line are programmed.

FIG. 24 is a circuit diagram illustrating another example BLK_c of thememory block of FIG. 5.

In the memory block BLK_c according to the present embodiment of theinventive concept, at least one dummy memory cell DMC is disposed ineach of the strings. In comparison with the memory block BLK_b shown inFIG. 6, in the memory block BLK_c shown in FIG. 24, the dummy memorycells DMC are disposed in each of the strings between a string selectiontransistor SST and memory cells MC1 to MC6, and between a groundselection transistor GST and the memory cells MC1 to MC6. The dummymemory cells DMC disposed at the same level are connected in common todummy word lines DWL1 and DWL2. That is, the dummy word lines DWL2 aredisposed between string selection lines SSL1 to SSL3 and the word linesWL1 to WL6, and the dummy word lines DWL1 are disposed between a groundselection line GSL and the word lines WL1 to WL6. A program order ofmemory cells included in the memory block BLK_c shown in FIG. 24 will bedescribed with reference to FIGS. 25 and 26.

FIG. 25 is a diagram illustrating a program order of memory cells of thememory block BLK_c of FIG. 24, according to a program method accordingto an embodiment of the inventive concept. FIG. 26 is a table showingthreshold voltages of the memory cells of FIG. 25 and voltages appliedto the memory cells and the dummy memory cells DMC.

Referring to FIG. 25, memory cells MC respectively connected to n wordlines WL1 to WLn are disposed between a ground selection transistor GSTand a string selection transistor SST. Also, the dummy memory cells DMCare disposed between the ground selection transistor GST or the stringselection transistor SST and the memory cells MC. A word line adjacentto a ground selection line GSL to a word line adjacent to a stringselection line SSL are sequentially referred to as first to n-th wordlines WL1 to WLn.

According to the program method as described above with reference toFIGS. 3 to 23, after memory cells of a first region R1 including an N-thword line (e.g., a second word line) are programmed, memory cells of anN−1-th word line (e.g., a first word line WL1) are programmed. In thiscase, as shown in FIG. 26, the program operation is performed such thata maximum value Vth2 of threshold voltages of the memory cells of theN−1-th word line WL(N−1) is equal to or lower than a maximum value Vth1of threshold voltages of the memory cells of the N-th word line WL(N).

Thus, during a program operation, a maximum value Vpgm2 of programvoltages applied to the memory cells of the N−1-th word line WL(N−1) isequal to or lower than a maximum value Vpgm1 of program voltages appliedto the memory cells of the N-th word line WL(N).

Also, a pass voltage Vpass2 applied to the memory cells of the N−1-thword line WL(N−1) is equal to or lower than a pass voltage Vpass1applied to the memory cells of the N-th word line WL(N). In this case, abias voltage Vbias may be applied to a dummy word line DWL to preventoccurrence of a sharp variation in channel voltage. The bias voltageVbias may be equal to or lower than a pass voltage Vpass2 applied to thememory cells of the N−1-th word line WL(N−1).

FIG. 27 is a schematic block diagram illustrating a memory system 20according to another embodiment of the inventive concept.

Referring to FIG. 27, the memory system 20 includes a memory device 100a and a memory controller 200 a. The memory device 100 a includes amemory cell array 110, and the memory controller 200 a includes aprogram management unit 260.

The memory controller 200 a controls the memory device 100 a to readdata stored in the memory cell array 110 of the memory device 100 a orwrite data to the memory cell array 110 in response to read/writerequests from a host HOST. The memory device 100 a performs a program(or write) operation, a read operation, and an erase operation on thememory cell array 110 based on an address ADDR, a command CMD, and acontrol signal CTRL provided by the memory controller 200 a.

In this case, the program management unit 260 determines an order inwhich memory cells are programmed in the memory cell array 110, andcontrols the number of bits of data to be stored in the memory cells ora voltage level to be applied to the memory cells when the memory cellsare programmed in the determined order. Similar to the embodimentsdescribed with reference to FIGS. 3 to 26, the program management unit260 may determine a program order such that an N−1-th word line isprogrammed after memory cells of a first region including an N-th wordline are programmed in a memory block. The program management unit 260may provide a signal including a program order and a signal forcontrolling the number of bits of data to be stored in the memory cellsor the voltage level to be applied to the memory cells as a command CMDto the memory device 100 a. The memory device 100 a may control aprogram order of the memory cells of the memory cell array 110 or avoltage applied to the memory cells based on the command CMD.

In one embodiment of the inventive concept, the program management unit260 determines the number (e.g., single-bit or multi-bit) of bits ofdata that is programmed in memory cells of an N−1-th word line or alevel of a program voltage such that a maximum value of thresholdvoltages of the memory cells of the N−1-th word line is equal to orlower than a maximum value of threshold voltages of memory cells of anN-th word line.

In another exemplary embodiment, the number of bits of data that isprogrammed in the memory cells of the N−1-th word line or the level ofthe program voltage may be controlled by a control logic (not shown)included in the memory device 100 a.

FIG. 28 is a block diagram illustrating an example embodying the memorycontroller 200 a of FIG. 27.

Referring to FIG. 28, the memory controller 200 a includes a processor210, a buffer memory 220, a host interface 230, an ECC unit 240, amemory interface 250, and a program management unit 260. Although notshown in FIG. 28, the memory controller 200 a may further includevarious other constituent elements, for example, a read-only memory(ROM) configured to store data codes required to initially boot a deviceincluding the memory system 20 or a buffer memory controller configuredto control the buffer memory 220.

The host interface 230 provides an interface between a host and thememory controller 200 a and receives a request for a memory operationfrom the host. For example, the host interface 230 may receive variousrequests such as data read and write requests from the host, andgenerate various internal signals for a memory operation on the memorydevice 100 a in response to the various requests. For example, thememory controller 200 a may communicate with the host via variousstandard interfaces. The standard interfaces may include variousinterfaces, such as ATA, SATA, external SATA (e-SATA), PATA, SCSI, SCSI(SAS), PCI, PCI express (PCI-E), IEEE 1394, USB, IDE, a secure digital(SD) card, a multimedia card (MMC), an embedded MMC (eMMC), and acompact flash (CF) card.

The processor 210 controls overall operations of the memory controller200 a, for example, various function blocks related to the memoryoperation on the memory device 100 a. Also, the processor 210 may beconfigured to drive firmware for controlling the memory controller 200a. In the present embodiment of the inventive concept, the programmanagement unit 260 is illustrated as a separate operation block. Inanother exemplary embodiment, the program management unit 260 mayoperate as a part of the processor 210. As described above withreference to FIG. 27, the program management unit 260 may determine anorder in which memory cells are programmed in the memory cell array 110.The program management unit 260 may determine a program order such thatan N−1-th word line is programmed after memory cells of a first regionincluding an N-th word line are programmed. Also, the program managementunit 260 may determine the number (e.g., single-bit or multi-bit) ofbits of data that is programmed in memory cells of the N−1-th word linesuch that a maximum value of threshold voltages of the memory cells ofthe N−1-th word line is equal to or lower than a maximum value ofthreshold voltages of the memory cells of the N-th word line.

The buffer memory 220 may temporarily store data externally transmittedthrough the host interface 230 and data transmitted from the memorydevice 100 a through the memory interface 250. Also, the buffer memory220 may temporarily store data required to control the memory device 100a. In the present exemplary embodiment, the buffer memory 220 maytemporarily store program order information generated by the programmanagement unit 260. For example, the buffer memory 220 may includeDRAM, SRAM, or a combination of DRAM and SRAM, but the inventive conceptis not limited thereto.

The ECC unit 240 may perform a process of performing an error check andcorrect (ECC) encoding operation on write data and a process ofperforming an ECC decoding operation on read data by using an algorithm,such as a Reed-Solomon (RS) code, a hamming code, a cyclic redundancycode (CRC). For example, the ECC unit 240 may generate a result ofdetection of errors in data read from the memory device 100 a andperform an error correction operation on the read data. For example, theECC unit 240 may detect error bits by comparing a parity generated andstored during programming of data with parity bits generated duringreading of data, and correct error bits by performing a predeterminedlogical operation (e.g., a logic exclusive OR (XOR)) on the detectederror bits.

The memory interface 250 provides an interface between the memorycontroller 200 a and the memory device 100 a. For example, the memoryinterface 250 may transmit and receive write data and read data to andfrom the memory device 100 a. Also, the memory interface 250 may furtherprovide an interface between the memory controller 200 a and the buffermemory 220.

FIG. 29 is a block diagram illustrating an example of applying thememory system according to any one of the above-described embodiments ofthe inventive concept to a memory card system 1000.

Referring to FIG. 29, the memory card system 1000 includes a host 1100and a memory card 1200. The host 1100 includes a host controller 1110and a host connector 1120. The memory card 1200 includes a cardconnector 1210, a card controller 1220, and a memory device 1230. Thememory card 1200 may be embodied by using the exemplary embodimentsillustrated in FIGS. 1 to 28. Reliability of the memory card 1200 may beimproved by controlling a program order of the memory device 1230 asdescribed above with reference to FIGS. 3 to 26.

The host 1100 may write data to the memory card 1200 or may read datastored in the memory card 1200. The host controller 1110 transmits acommand CMD, a clock signal CLK generated by a clock generator (notshown) in the host 1100, and data DATA, to the memory card 1200 via thehost connector 1120.

The card controller 1220, in response to the command CMD receivedthrough the card connector 1210, may store the data DATA in the memorydevice 1230 in synchronism with the clock signal CLK generated by theclock generator in the host 1100. The memory device 1230 may store thedata DATA transmitted from the host 1100.

The memory card 1200 may be embodied by a compact flash card (CFC), amicrodrive, a smart media card (SMC), a multimedia card (MMC), asecurity digital card (SDC), a memory stick, a USB flash memory driver,or the like.

FIG. 30 is a block diagram illustrating a computing system 2000including a memory system 2100 according to any one of theabove-described exemplary embodiments.

Referring to FIG. 30, the computing system 2000 includes the memorysystem 2100, a processor 2200, RAM 2300, an input/output (I/O) device2400, and a power supply 2500. Alternatively, although not illustratedin FIG. 30, the computing system 2000 may further include ports that maycommunicate with a video card, a sound card, a memory card, a USBdevice, etc. or other electronic devices. The computing system 2000 maybe embodied by a personal computer or a portable electronic apparatussuch as a laptop computer, a mobile phone, a personal digital assistant(PDA), and a camera.

The processor 2200 may perform particular calculations or tasks. In someexemplary embodiments, the processor 2200 may be a micro-processor (MP)or a central processing unit (CPU). The processor 2200 may performcommunication with the RAM 2300, the I/O device 2400, and the memorysystem 2100 via a bus 2600 such as an address bus, a control bus, and adata bus. The memory system 2100 may be embodied by using the memorydevice illustrated in FIGS. 1 to 29. Memory cells of the memory device2110 may be programmed according to the program method described abovewith reference to FIGS. 3 to 26. In the program method, a program ordermay be determined by a program order determiner (not shown) included inthe memory device 2110 or the memory controller 2120.

According to an embodiment, the processor 2200 may be connected to anextended bus such as a peripheral component interconnect (PCI) bus.

The RAM 2300 may store data needed for the operation of the computingsystem 2000. For example, the RAM 2300 may be embodied by dynamic RAM(DRAM), mobile DRAM, static RAM (SRAM), PRAM, ferroelectric RAM (FRAM),and/or MRAM.

The I/O device 2400 may include an input device such as a keyboard, akeypad, or a mouse, and an output device such as a printer or a display.The power supply 2500 may supply an operating voltage needed for theoperation of the computing system 2000.

FIG. 31 is a block diagram illustrating an example of applying thememory system according to any one of the above-described embodiments ofthe inventive concept to a solid-state drive (SSD) system 3000.

Referring to FIG. 31, the SSD system 3000 includes a host 3100 and anSSD 3200. The SSD 3200 may exchange signals with the host 3100 via asignal connector (not shown) and may receive an input of power through apower connector (not shown). The SSD 3200 may include an SSD controller3210, an auxiliary power supply 3220, and a plurality of memory devices3230, 3240, and 3250. Each of the memory devices 3230, 3240, and 3250may be a VNAND flash memory device. In this case, the SSD 3200 may beembodied by using the exemplary embodiments illustrated in FIGS. 1 to30.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. A method of programming a non-volatile memorydevice including a plurality of memory cells that are stacked in avertical direction over a substrate and that are connected to n wordlines, wherein n is an integer greater than or equal to 3, the methodcomprising: programming memory cells of second to n−1-th word lines,from among first to n-th word lines that are sequentially disposed inthe vertical direction over the substrate, to a multi-level state,wherein a multi-level program operation is sequentially finished fromthe second to n−1-th word lines in an order in which the word lines aredisposed; and programming memory cells of the first word line to asingle level state after the programming memory cells of the second ton−1-th word lines to a multi-level state.
 2. The method of claim 1,wherein the plurality of memory cells comprise a first region includingthe memory cells of the second to n−1-th word lines and a second regionincluding the memory cells of the first word line, wherein the firstregion is a multi-level cell region configured to store data having atleast 2 bits per memory cell, and the second region is a single-levelcell region configured to store 1-bit data per memory cell.
 3. Thememory of claim 1, wherein the memory cells of the first word line areadjacent to a ground selection transistor, and memory cells of the n-thword line are adjacent to a string selection transistor.
 4. The methodof claim 3, wherein a dummy memory cell is disposed in at least one ofportions between the memory cells of the first word line and the groundselection transistor, and portions between the memory cells of the n-thword line and the string selection transistor.
 5. The method of claim 1,further comprising programming memory cells of the n-th word line to asingle level state after the programming of the memory cells of thesecond to n−1-th word lines to a multi-level state.
 6. The method ofclaim 1, wherein a maximum value of threshold voltages of the memorycells of the first word line is lower than or equal to a maximum valueof threshold voltages of the memory cells of the second word line. 7.The method of claim 1, wherein during a program operation, a second passvoltage applied to the first word line is lower than a first passvoltage applied to at least one of the second to n−1-th word lines. 8.The method of claim 1, wherein during a program operation, a maximumvalue of a second program voltage applied to the first word line islower than a maximum value of a first program voltage applied to thesecond to n−1-th word lines.
 9. The method of claim 1, wherein thenon-volatile memory device comprises a plurality of planes that areselected by different string selection lines and that share the first ton-th word lines therebetween, wherein after memory cells of differentplanes connected to one word line are sequentially programmed in unitsof planes, memory cells connected to another word line are programmed.10. The method of claim 1, wherein in a memory cell string including thememory cells of the first to n-th word lines, the memory cells of thefirst word line are programmed last.
 11. A method of programming avertical NAND (VNAND) flash memory system comprising a NAND flash memorydevice including a plurality of memory cells, which are stacked in avertical direction over a substrate and connected to word lines, and amemory controller configured to control a program order of the VNANDflash memory device, the method comprising: sequentially programmingmemory cells of a first region including an N-th word line, from memorycells of the N-th word line to memory cells of a word line disposedfarthest from the N-th word line, wherein N is an integer greater thanor equal to 2; and programming memory cells of an N−1-th word line afterthe programming of the memory cells of the first region, wherein amaximum value of threshold voltages of the memory cells of the N−1-thword line is equal to or lower than a maximum value of thresholdvoltages of the memory cells of the N-th word line.
 12. The method ofclaim 11, further comprising programming memory cells of an N−2-th wordline after the programming of the memory cells of the N−1-th word line,wherein a maximum value of threshold voltages of the memory cells of theN−2-th word line is equal to or lower than a maximum value of thresholdvoltages of the memory cells of the N−1-th word line.
 13. The method ofclaim 11, wherein the memory cells of the N-th word line are included ina multi-level cell region configured to store data having at least2-bits per memory cell, and the memory cells of the N−1-th word line areincluded in a single-level cell region configured to store 1-bit dataper memory cell.
 14. The method of claim 11, wherein the N-th word lineis a word line disposed as an N-th word line from a ground selectionline or a string selection line from among a plurality of word lines.15. The method of claim 11, wherein during the programming of memorycells of a K-th word line, a first pass voltage is applied to the N-thword line, and a second pass voltage having a lower voltage level thanthe first pass voltage is applied to the N−1-th word line, wherein K isan integer that is greater than N.
 16. A method of programming anon-volatile memory device including a plurality of memory cells thatare connected to n word lines and that are stacked in a verticaldirection over a substrate between a ground selection transistor and astring selection transistor, the method comprising: programming memorycells of a first word line from the n word lines that are adjacent theground selection transistor and memory cells of an n-th word line fromamong the n word lines that are adjacent the string selectiontransistor, after programming memory cells of second to n−1-th wordlines from among the n word lines, wherein a maximum value of thresholdvoltages of the memory cells of the first word line is lower than orequal to a maximum value of threshold voltages of the memory cells ofthe second word line.
 17. The method of claim 16, wherein saidprogramming comprises programming the memory cells of the first wordline and the memory cells of the n-th word line with 1-bit data permemory cell, and programming the memory cells of the second to n−1-thword lines with multi-bit data per memory cell.
 18. The method of claim16, wherein a maximum value of threshold voltages of the memory cells ofthe n-th word line is equal to the maximum value of threshold voltagesof the memory cells of the first word line or the maximum value ofthreshold voltages of the memory cells of the second word line.
 19. Themethod of claim 16, wherein during a program operation, a second passvoltage applied to the first word line is lower than a first passvoltage applied to at least one of the second to n−1-th word lines. 20.The method of claim 16, wherein during a program operation, a maximumvalue of a second program voltage applied to the first word line islower than a maximum value of a first program voltage applied to thesecond to n−1-th word lines.